參數(shù)資料
型號: STP4NC50FP
廠商: 意法半導(dǎo)體
英文描述: INTEGRATED EC000 MPU
中文描述: N溝道500V - 2.2ohm - MOSFET的4A條TO-220/TO-220FP PowerMeshII
文件頁數(shù): 2/9頁
文件大?。?/td> 107K
代理商: STP4NC50FP
STP4NC50/FP
2/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE = 25
°
C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Breakdown Voltage
ON
(1)
Symbol
V
GS(th)
DYNAMIC
Symbol
TO-220
1.56
TO-220FP
3.12
Rthj-case
Thermal Resistance Junction-case Max
°
C/W
°
C/W
°
C/W
°
C
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
Rthc-sink
Thermal Resistance Case-sink Typ
0.5
T
l
Maximum Lead Temperature For Soldering Purpose
300
Parameter
Max Value
Unit
I
AR
10
A
E
AS
110
mJ
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
I
D
= 250
μ
A, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125
°
C
1
μ
A
μ
A
50
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30V
±
100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 1.5 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
2.2
2.7
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
4
A
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 2A
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
3
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
315
pF
C
oss
Output Capacitance
52
pF
C
rss
Reverse Transfer
Capacitance
7.7
pF
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