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參數(shù)資料
| 型號(hào)： | STP4NA100 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32BIT W/ CACHE, MMU, FPU |
| 中文描述： | ? -快速通道增強(qiáng)型功率MOS器件 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | STP4NA100 |
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
1
62.5
0.5
300
o
C/W
oC/W
o
C/W
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 50 V)
4.2
A
E
AS
160
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero
Gate
Drain Current (V
GS
= 0)
Gate-body
Current (V
DS
= 0)
I
D
= 250
μ
A V
GS
= 0
1000
V
I
DSS
Voltage
V
DS
= Max Rating
V
DS
= Max Rating T
c
= 100
o
C
50
250
±
100
μ
A
μ
A
nA
I
GSS
Leakage
V
GS
=
±
30 V
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage V
DS
= V
GS
I
D
= 250
μ
A
Static Drain-source On
Resistance
2.25
3
3.75
V
V
GS
= 10V I
D
= 2.1 A
3
3.5
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
A
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
ReverseTransfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
=2.1 A
2
5.5
S
C
iss
C
oss
C
rss
V
DS
= 25 V f = 1 MHz V
GS
= 0
1650
127
31
pF
pF
pF
STP4NA100
2/5
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