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參數(shù)資料
| 型號： | STP45NEO6 |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運(yùn)算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 114K |
| 代理商： | STP45NEO6 |
1/6
PRELIMINARY DATA
November 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STP45NF06
N-CHANNEL 60V - 0.022
- 38A TO-220
STripFET POWER MOSFET
(1) I
SD
≤
38A, di/dt
≤
300A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
I
TYPICAL R
DS
(on) = 0.022
I
EXCEPTIONAL dv/dt CAPABILITY
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
Size
”
strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
“Single
Feature
APPLICATIONS
I
HIGH-EFFICIENCY DC-DC CONVERTERS
I
SOLENOID AND RELAY DRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP45NF06
60V
<0.028
38A
Parameter
Value
Unit
60
V
60
V
±20
V
38
A
26
A
152
A
80
W
0.53
7
W/°C
V/ns
–65 to 175
°C
175
°C
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
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PDF描述 |
|---|---|
| STP45N10FI | CONNECTOR ACCESSORY |
| STP5N30LFI | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STP5NA50 | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOSFET) |
| STP5NA50FI | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOSFET) |
| STP5NA60 | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP45NF06 | 功能描述:MOSFET N-Ch 60 Volt 38 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP45NF06L | 功能描述:MOSFET N-Ch 60 Volt 38 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP45NF06L | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| STP45NF3LL | 功能描述:MOSFET N-Ch 30 Volt 45 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP45NF3LL_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET |
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