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參數(shù)資料
| 型號(hào)： | STP40NS15 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 150V - 0.042ohm - 40A TO-220 MESH OVERLAY⑩ MOSFET |
| 中文描述： | N溝道150伏- 0.042ohm - 40A至- 220 MOSFET的網(wǎng)格密胺⑩ |
| 文件頁(yè)數(shù)： | 3/13頁(yè) |
| 文件大小： | 348K |
| 代理商： | STP40NS15 |
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3/13
STB40N20 - STP40N20 - STW40N20
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
R
DS(on)
Static Drain-source On
Resistance
Table 7: Dynamic
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
Table 8: Source Drain Diode
Symbol
I
SD
I
SDM
(2)
Source-drain Current (pulsed)
V
SD
(1)
Forward On Voltage
t
rr
Q
rr
I
RRM
Reverse Recovery Current
t
rr
Q
rr
I
RRM
Reverse Recovery Current
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Test Conditions
I
D
= 1mA, V
GS
= 0
Min.
200
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
10
μA
μA
V
GS
= ± 20V
±100
nA
2
3
4
V
V
GS
= 10V, I
D
= 20 A
0.038
0.045
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
=20 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
30
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
2500
510
78
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
r
Q
g
Q
gs
Q
gd
V
DD
= 100 V, I
D
= 20 A,
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 17)
20
44
74
22
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 160V, I
D
= 40 A,
V
GS
= 10V
75
13.2
35.5
nC
nC
nC
Parameter
Test Conditions
Min.
Typ.
Max.
40
160
Unit
A
A
Source-drain Current
I
SD
= 20 A, V
GS
= 0
I
SD
= 20 A, di/dt = 100A/μs
V
DD
= 100V, T
j
= 25°C
(see test circuit, Figure 18)
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
192
922
9.6
ns
nC
A
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 20 A, di/dt = 100A/μs
V
DD
= 100V, T
j
= 150°C
(see test circuit, Figure 18)
242
1440
11.9
ns
nC
A
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