- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382563 > STP40NE03L-20 (意法半導體) N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE” POWER MOSFET PDF資料下載
參數(shù)資料
| 型號： | STP40NE03L-20 |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE” POWER MOSFET |
| 中文描述： | ? -通道增強型“特征尺寸單”功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 102K |
| 代理商： | STP40NE03L-20 |
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1.88
62.5
0.5
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 15V)
40
A
E
AS
200
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
μ
A
V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
o
C
V
GS
=
±
15 V
T
c
= 125
1
10
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
V
DS
= V
GS
I
D
= 250
μ
A
1
1.8
2.5
V
R
DS(on)
V
GS
= 10V
V
GS
= 5V
I
D
= 20 A
I
D
= 20 A
0.014
0.02
0.023
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
40
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 20 A
15
20
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1850
450
160
2400
590
210
pF
pF
pF
STP40NE03L-20
2/8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STP45N10 | N-Channel 100V-0.027Ω-45A- TO-220/TO-220FI Power MOS Transistor(N溝道功率MOS晶體管) |
| STP4N100 | N-Channel Enhancement Mode Power MOS Transistor(N溝道增強模式功率MOSFET) |
| STP4NB100FP | N-Channel 1000V-4Ω-3.8A- TO-220/TO-220FP PowerMESHTM MOSFET(N溝道MOSFET) |
| STP4NB100 | N-Channel 1000V-4Ω-3.8A- TO-220/TO-220FP PowerMESHTM MOSFET(N溝道MOSFET) |
| STP4NB30 | N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh⑩ MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP40NF03L | 功能描述:MOSFET N-Ch 30 Volt 40 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP40NF03L | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| STP40NF03L_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.018ヘ - 40A - TO-220 STripFET⑩ Power MOSFET |
| STP40NF10 | 功能描述:MOSFET N-Ch 100 Volt 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP40NF10 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
發(fā)布緊急采購，3分鐘左右您將得到回復。