- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382558 > STP3NK90Z (意法半導(dǎo)體) N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | STP3NK90Z |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET |
| 中文描述： | N溝道900V - 4.1ohm -第3A TO-220/TO-220FP/DPAK/IPAK齊保護的SuperMESH⑩功率MOSFET |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 613K |
| 代理商： | STP3NK90Z |
STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
2/13
ABSOLUTE MAXIMUM RATINGS
Symbol
( ) Pulse width limited by safe operating area
(1) I
SD
≤
3A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
STP3NK90Z
STP3NK90ZFP
STD3NK90Z
STD3NK90Z-1
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
900
V
900
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
3
3 (*)
3
A
1.89
1.89 (*)
1.89
A
12
12 (*)
12
A
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
90
25
90
W
0.72
0.2
0.72
W/°C
V
ESD(G-S)
dv/dt (1)
V
ISO
T
j
T
stg
4000
V
4.5
V/ns
Insulation Withstand Voltage (DC)
-
2500
-
V
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
TO-220
TO-220FP
DPAK
IPAK
1.38
100
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.38
5
°C/W
°C/W
°C
62.5
Maximum Lead Temperature For Soldering Purpose
300
Parameter
Max Value
3
Unit
A
180
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD3NK90Z | N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET |
| STP3NK90ZFP | N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET |
| STD3NK90Z-1 | N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET |
| STD3NM50 | N-CHANNEL 500V - 2.5ohm - 3A DPAK/IPAK Zener-Protected MDmesh⑩Power MOSFET |
| STD3NM50-1 | N-CHANNEL 500V - 2.5ohm - 3A DPAK/IPAK Zener-Protected MDmesh⑩Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP3NK90Z | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| STP3NK90ZFP | 功能描述:MOSFET N-CH 900V 3A TO-220FP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:SuperMESH™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| STP3NK90ZFP | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220FP |
| STP400N4F6 | 制造商:STMicroelectronics 功能描述:POWER MOSFET - Rail/Tube 制造商:STMicroelectronics 功能描述:STP400N4F6 Series 40 V 120 A 1.7 mOhm N-channel Power MOSFET - TO-220-3 制造商:STMicroelectronics 功能描述:MOSFET N-CH 40V 120A STripFET VI DeepGATE |
| STP4020PQFP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PC Card Support |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。