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參數資料
| 型號： | STP32N05LFI |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| 中文描述： | ? -通道增強型功率MOS器件 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 201K |
| 代理商： | STP32N05LFI |
STP32N05L
STP32N05LFI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 0.045
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
LOGIC LEVEL COMPATIBLE INPUT
I
175
o
C OPERATING TEMPERATURE
I
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
REGULATORS
I
DC-DC & DC-AC CONVERTERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
1
2
3
TO-220
ISOWATT220
November 1996
TYPE
V
DSS
R
DS(on)
< 0.055
< 0.055
I
D
STP32N05L
STP32N05LFI
50 V
50 V
32 A
19 A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP32N05L
STP32N05LFI
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
50
V
V
DGR
50
V
V
GS
±
15
V
I
D
32
19
A
I
D
22
13
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
128
128
A
105
40
W
Derating Factor
0.7
0.27
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
2000
V
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
175
1
2
3
1/10
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相關代理商/技術參數 |
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| STP32N06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
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