- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381116 > STP3015L (意法半導體) N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET PDF資料下載
參數(shù)資料
| 型號： | STP3015L |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET |
| 中文描述： | ? -通道30V的- 0.013歐姆- 40A條- D2PAK/TO-220 STripFETO的功率MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 59K |
| 代理商： | STP3015L |
STB3015L
STP3015L
N - CHANNEL 30V - 0.013
- 40A - D
2
PAK/TO-220
STripFET
POWER MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.013
I
EXCEPTIONAL dv/dt CAPABILITY
I
LOW GATE CHARGE A 100
o
C
I
APPLICATION ORIENTED
CHARACTERIZATION
I
FOR THROUGH-HOLE VERSION
CONTACT SALES OFFICE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique " Single Feature
Size
" strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalanche charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 0.0155
I
D
STB3015L
30 V
40 A
July 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
30
V
30
V
V
GS
±
20
40
V
I
D
A
I
D
28
A
I
DM
(
)
160
A
P
tot
80
W
Derating Factor
0.53
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
7
V/ns
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area (
1
) I
SD
≤
40 A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
175
o
C
1
3
D
2
PAK
TO-263
(Suffix "T4")
1
2
3
TO-220
1/5
相關PDF資料 |
PDF描述 |
|---|---|
| STB3015 | N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET |
| STB3015L | N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET |
| STP3020 | N - CHANNEL 30V - 0.019ohm - 40A - TO-220 STripFET POWER MOSFET |
| STP3020L | N - CHANNEL 30V - 0.019ohm - 40A - TO-220 STripFET POWER MOSFET |
| STP33N10 | N-Channel Enhancement Mode Power MOS Transistor(N溝道增強模式功率MOSFET) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STP3020 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 30V - 0.019ohm - 40A - TO-220 STripFET POWER MOSFET |
| STP3020L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 30V - 0.019ohm - 40A - TO-220 STripFET POWER MOSFET |
| STP3055L2 | 制造商:SAMHOP 制造商全稱:SAMHOP 功能描述:N-Channel Logic Level E nhancement Mode Field Effect Transistor |
| STP30N05 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STP30N05FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復。