參數(shù)資料
型號： STP2NC60
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 600V - 7ohm - 1.9A - TO-220/TO-220FP PowerMesh⑩II MOSFET
中文描述： N溝道600V的- 7ohm - 1.9A - TO-220/TO-220FP PowerMesh第二MOSFET的⑩
文件頁數(shù)： 2/9頁
文件大?。?/td> 334K
代理商： STP2NC60
STP2NC60/STP2NC60FP
2/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON
(1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
TO-220
1.76
TO-220FP
4.125
Rthj-case
Rthj-amb
Rthc-sink
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
°C/W
°C/W
°C/W
62.5
0.5
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
1.9
Unit
A
80
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
μA
10
μA
V
GS
= ±30V
±100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 0.7 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
2
3
4
V
Static Drain-source On
Resistance
7
8
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
1.9
A
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 0.7A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
1.25
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
Input Capacitance
160
pF
Output Capacitance
26
pF
C
rss
Reverse Transfer
Capacitance
3.8
pF
相關(guān)PDF資料
PDF描述
STP2NC60FP N-CHANNEL 600V - 7ohm - 1.9A - TO-220/TO-220FP PowerMesh⑩II MOSFET
STP30NE03L Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:4VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:47uF; Capacitance Tolerance:+/- 20%; ESR:500mohm; Leaded Process Compatible:Yes RoHS Compliant: Yes
STP30NE03LFP Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:100uF; Capacitance Tolerance:+/- 20%; ESR:150mohm; Leaded Process Compatible:Yes RoHS Compliant: Yes
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STP2NC60FP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 7ohm - 1.9A - TO-220/TO-220FP PowerMesh⑩II MOSFET
STP2NC70Z 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
STP2NC70ZFP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
STP2NK100Z 功能描述:MOSFET N-Channel 1000V Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP2NK60Z 功能描述:MOSFET N-Ch 600 Volt 1.4Amp 511-STP22NF03L RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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