參數(shù)資料
型號： STP2NA50
廠商： 意法半導(dǎo)體
英文描述： Supercapacitor; Capacitance:1F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:30ohm; Lead Pitch:20mm; Operating Temp. Max:70 C RoHS Compliant: Yes
中文描述： ? -通道增強(qiáng)型功率MOS器件
文件頁數(shù)： 2/6頁
文件大小： 57K
代理商： STP2NA50
THERMAL DATA
TO220
ISOWATT220
R
thj-case
Thermal Resistance Junction-case
Max
1.67
3.57
o
C/W
o
C/W
o
C/W
o
C
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Typ
62.5
0.5
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
δ
< 1%)
2.8
A
E
AS
42
mJ
E
AR
1.6
mJ
I
AR
1.8
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A
V
GS
= 0
500
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
V
GS
=
±
30 V
T
c
= 125
o
C
250
1000
μ
A
μ
A
I
GSS
Gate-Source Leakage
Current (V
DS
= 0)
100
mA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
ID
= 250
μ
A
2.25
3
3.75
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
V
GS
= 10 V
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
I
D
= 1.4 A
I
D
= 1.4 A
T
c
= 100
o
C
3.25
4
8
A
I
D(on)
On State Drain Current
2.8
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 1.4 A
0.8
2
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
300
55
15
400
70
20
pF
pF
pF
STP2NA50/FI
2/6
相關(guān)PDF資料
PDF描述
STP2NA50FI Supercapacitor; Capacitance:1.5F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:30ohm; Lead Pitch:20mm; Operating Temp. Max:70 C RoHS Compliant: Yes
STP2NC60 N-CHANNEL 600V - 7ohm - 1.9A - TO-220/TO-220FP PowerMesh⑩II MOSFET
STP2NC60FP N-CHANNEL 600V - 7ohm - 1.9A - TO-220/TO-220FP PowerMesh⑩II MOSFET
STP30NE03L Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:4VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:47uF; Capacitance Tolerance:+/- 20%; ESR:500mohm; Leaded Process Compatible:Yes RoHS Compliant: Yes
STP30NE03LFP Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:100uF; Capacitance Tolerance:+/- 20%; ESR:150mohm; Leaded Process Compatible:Yes RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STP2NA50FI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP2NC60 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 7ohm - 1.9A - TO-220/TO-220FP PowerMesh⑩II MOSFET
STP2NC60FP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 7ohm - 1.9A - TO-220/TO-220FP PowerMesh⑩II MOSFET
STP2NC70Z 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
STP2NC70ZFP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
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