參數(shù)資料
型號(hào)： STP22NS25Z
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 250V - 0.13ohm - 22A TO-220/D2PAK Zener-Protected MESH OVERLAY⑩ MOSFET
中文描述： N溝道250V - 0.13ohm - 22A條TO-220/D2PAK齊保護(hù)的網(wǎng)格密胺⑩MOSFET的
文件頁數(shù)： 3/10頁
文件大小： 449K
代理商： STP22NS25Z
3/10
STP22NS25Z / STB22NS25Z
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
SWITCHING OFF
Symbol
t
d(Voff)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
Parameter
Test Conditions
V
DD
= 125 V, I
D
= 11 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
V
DD
= 200V, I
D
= 20 A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
Turn-on Delay Time
20
ns
t
r
Rise Time
30
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
108
151
nC
Gate-Source Charge
11
nC
Gate-Drain Charge
40
nC
Parameter
Test Conditions
V
DD
= 125V, I
D
= 11 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 3)
V
clamp
= 200V, I
D
= 22 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
100
78
Max.
Unit
ns
ns
Turn-off- Delay Time
Fall Time
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
37
65
110
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
22
A
Source-drain Current (pulsed)
88
A
Forward On Voltage
I
SD
= 22 A, V
GS
= 0
I
SD
= 22 A, di/dt = 100A/μs
V
DD
= 50V, T
j
= 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
292
ns
Reverse Recovery Charge
3065
nC
Reverse Recovery Current
21
A
Parameter
Test Conditions
Igs=± 500
μ
A (Open Drain)
Min.
20
Typ.
Max.
Unit
V
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