參數(shù)資料
型號(hào)： STP22NF03L
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 30V - 0.038ohm - 22A TO-220 STripFET⑩ POWER MOSFET
中文描述： N溝道30V的- 0.038ohm - 22A條，220 STripFET⑩功率MOSFET
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 239K
代理商： STP22NF03L
3/8
STP22NF03L
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Test Conditions
V
DD
= 15V, I
D
= 11A
R
G
= 4.7
V
GS
= 4.5V
(see test circuit, Figure 3)
V
DD
= 24V, I
D
= 22A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
11
ns
t
r
Rise Time
100
ns
Q
g
Total Gate Charge
6.5
9
nC
Q
gs
Q
gd
Gate-Source Charge
3.6
nC
Gate-Drain Charge
2
nC
Parameter
Test Conditions
V
DD
= 15V, I
D
= 11A,
R
G
= 4.7
,
V
GS
= 4.5V
(see test circuit, Figure 3)
Min.
Typ.
Max.
Unit
t
d(off)
Turn-off-Delay Time
25
ns
t
f
Fall Time
22
ns
t
r(off)
Off-voltage Rise Time
Vclamp =24V, I
D
=22A
R
G
= 4.7
,
V
GS
= 4.5V
22
ns
t
f
t
c
Fall Time
(see test circuit, Figure 5)
55
ns
Cross-over Time
75
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
22
A
Source-drain Current (pulsed)
88
A
Forward On Voltage
I
SD
= 22A, V
GS
= 0
I
SD
= 22A, di/dt = 100A/μs,
V
DD
= 15V, T
j
= 150°C
(see test circuit, Figure 5)
1.5
V
t
rr
Reverse Recovery Time
30
ns
Q
rr
I
RRM
Reverse Recovery Charge
18
nC
Reverse Recovery Current
1.2
A
Thermal Impedence
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