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參數(shù)資料
| 型號： | STP20NM60 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
| 中文描述： | N溝道600V的- 0.25ohm - 20A條TO-220/FP/D2PAK/I2PAK的MDmesh？功率MOSFET |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 221K |
| 代理商： | STP20NM60 |
DATA SHEET
1
STP2000QFP
Master I/O
32-bit SBus Master I/ O Controller
D
ESCRIPTION
The STP2000 Master I/ O Controller is an integrated SBus master device with built-in standard I/ O capabili-
ties for general purpose computing or embedded applications. The STP2000 directly interfaces the CPU
through the system bus, SBus, to three major I/ O channels for peripherals. The I/ O channels include SCSI-II,
ethernet and a parallel port. Together, with the STP2001 Slave I/ O Controller, it provides a complete I/ O
subsystem.
The STP2000 SBus interface is a 32-bit interface that supports both DMA and slave modes. There is data buff-
ering and flow control on each of the I/ O channels. Each channel has access to the SBus through the controller
which is capable of DMA transfers of up to 32-byte bursts. The SBus slave port is used mostly for status and
control.
The STP2000 incorporates an ethernet controller, a Fast 8-bit SCSI-II controller, and a Centronics parallel port
controller in a single package. The SCSI-II channel directly drives external peripherals. The ethernet channel
can be connected to an external transceiver chip that supports twisted pair ethernet or AUI ethernet. The par-
allel port channel can be routed to external transceivers.
Features
Benefits
Single-chip solution to standard SPARC DVMA devices
Compatible with microSPARC, SuperSPARC and any
SBus based system
Supports concurrent 10 MByte/sec SCSI transfers,
1.25 MByte/sec Ethernet transfers, and 4 MByte/sec
Parallel Port transfers
Direct master/slave SBus interface
JTAG internal and boundary SCAN logic
160-pin PQFP packaging
IC is also available from NCR Corp. (PN - NCR89C100)
Saves cost, power, board space, and weight
Standard low-cost solution
Improved system performance
Improved system performance
Improved chip and board level testability
Cost effective packaging
Second source
July 1997
This Material Copyrighted by Its Respective Manufacturer
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| STP20NM60A | 功能描述:MOSFET N-Ch 650 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP20NM60FD | 功能描述:MOSFET N-Ch 600 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP20NM60FP | 功能描述:MOSFET N-Ch 600 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP20NM65N | 功能描述:MOSFET N-Channel 650V Pwr Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP210N75F6 | 功能描述:MOSFET N-Ch 75V 3mOhm 120A STripFET VI RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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