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參數(shù)資料
| 型號： | STP17NK40ZFP |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 400V - 0.23ohm - 15A TO-220/TO-220FP Zener-Protected SuperMESH⑩Power MOSFET |
| 中文描述： | N溝道400V - 0.23ohm - 15A條TO-220/TO-220FP齊保護的SuperMESH⑩功率MOSFET |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 394K |
| 代理商： | STP17NK40ZFP |
STP17NK40Z - STP17NK40ZFP
2/10
ABSOLUTE MAXIMUM RATINGS
Symbol
(
l
) Pulse width limited by safe operating area
(1) I
SD
≤
15A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
STP17NK40Z
STP17NK40ZFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
400
V
400
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
15
15 (*)
A
9.4
9.4 (*)
A
Drain Current (pulsed)
60
60 (*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
150
35
W
1.2
0.28
W/°C
I
GS
Gate-source Current (DC)
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
± 20
mA
V
ESD(G-S)
dv/dt (1)
Viso
T
j
T
stg
4500
V
4.5
V/ns
V
--
2500
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
TO-220
0.83
TO-220FP
3.6
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
°C/W
°C/W
°C
62.5
300
Maximum Lead Temperature For Soldering Purpose
Parameter
Max Value
15
Unit
A
450
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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