參數(shù)資料
型號： STP16NF06L
廠商： 意法半導體
英文描述： N-CHANNEL 60V - 0.07 ohm - 16A TO-220/TO-220FP STripFET⑩ II POWER MOSFET
中文描述： N溝道60V的- 0.07歐姆- 16A條TO-220/TO-220FP STripFET⑩二功率MOSFET
文件頁數(shù)： 3/9頁
文件大?。?/td> 337K
代理商： STP16NF06L
3/9
STP16NF06L/FP
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 30 V
R
G
= 4.7
(Resistive Load, Figure 3)
I
D
= 8 A
V
GS
= 4.5 V
10
37
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 48 V I
D
= 16 A V
GS
= 5V
7.3
2.1
3.1
10
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 30 V
R
G
= 4.7
,
(Resistive Load, Figure 3)
I
D
= 8 A
V
GS
= 4.5 V
20
12.5
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
16
64
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 16 A
V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 16 A
V
DD
= 16 V
(see test circuit, Figure 5)
di/dt = 100A/μs
T
j
= 150°C
50
67.5
2.7
ns
nC
A
ELECTRICAL CHARACTERISTICS
(continued)
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STP16NF06L 制造商:STMicroelectronics 功能描述:MOSFET N TO-220
STP16NF06L 制造商:STMicroelectronics 功能描述:MOSFET N CH 60V 16A TO220 制造商:STMicroelectronics 功能描述:MOSFET, N CH, 60V, 16A, TO220 制造商:STMicroelectronics 功能描述:MOSFET, N CH, 60V, 16A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; No. of Pins:3 ;RoHS Compliant: Yes
STP16NF06LFP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 60V - 0.07 ohm - 16A TO-220/TO-220FP STripFET⑩ II POWER MOSFET
STP16NF25 功能描述:MOSFET N-Channel 250V Pwr Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP16NK60Z 功能描述:MOSFET N-Ch 600 Volt 14 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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