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參數(shù)資料
| 型號： | STN790A |
| 廠商： | 意法半導體 |
| 英文描述： | MEDIUM CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR |
| 中文描述： | 介質電流，高性能，低電壓PNP晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 125K |
| 代理商： | STN790A |
THERMAL DATA
R
thj-amb
Device mounted on a PCB area of 1 cm
2
.
Thermal Resistance Junction-Ambient Max
78
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= -30 V
V
CB
= -30 V T
j
= 100
o
C
-0.1
-10
μ
A
μ
A
μ
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
(BR)CER
Collector-Emitter
Breakdown Voltage
(R
BE
= 47
)
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
EB
= -4 V
-1
I
C
= -10 mA
-60
V
I
C
= -100
μ
A
-60
V
I
E
= -100
μ
A
-5
V
I
C
= -0.5A I
B
= -5mA
I
C
= -1A I
B
= -10mA
I
C
= -2A I
B
= -20mA
I
C
= -3A I
B
= -30mA
I
C
= -3A I
B
= -30mA T
j
= 100
o
C
-0.15
-0.3
-0.5
-0.7
-0.9
V
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
DC Current Gain
I
C
= -1 A I
B
= -10 mA
-0.8
-1.0
V
V
BE(on)
I
C
= -1 A V
CE
= -2 V
-0.8
-1
V
h
FE
I
C
= -10 mA V
CE
= -2 V
I
C
= -500 mA V
CE
= -2 V
I
C
= -1 A V
CE
= -2 V
I
C
= -2 A V
CE
= -1 V
I
C
= -3 A V
CE
= -1V
100
100
100
100
90
200
200
160
130
300
300
f
T
Transition Frequency
I
C
= -50 mA V
= -5V f = 50MHz
100
MHz
t
d
t
r
t
s
t
f
RESISTIVE LOAD
Delay Time
RiseTime
StorageTime
Fall Time
I
C
= -3 A I
B1
= - I
B2
= -60 mA
V
CC
= -20 V (see figure 1)
180
160
250
80
220
210
300
100
ns
ns
ns
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle
≤
1.5 %
STN790A
2/6
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