- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380772 > STM6930 (SamHop Microelectronics Corp.) Dual N-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | STM6930 |
| 廠商： | SamHop Microelectronics Corp. |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 704K |
| 代理商： | STM6930 |
Dual N-Channel Enhancement Mode Field Effect Transistor
Surface Mount Package.
SamHop Microelectronics Corp.
PRODUCT SUMMARY
V
DSS
I
D
R
DS(ON) ( m
) Max
55V
4.8A
45 @ V
GS
= 10V
FEATURES
Super high dense cell design for low R
DS(ON
).
Rugged and reliable.
1
S
1
2
G
1
3
S
2
4
G
2
8
7
6
5
D
1
D
1
D
2
D
2
SO-8
1
65 @ V
GS
= 4.5V
STM6930
Arp,20 2005 ver1.2
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Unit
Drain-Source Voltage
V
DS
V
V
Gate-Source Voltage
V
GS
Drain Current-Continuous @ Ta
-Pulsed
I
D
2
A
A
A
W
I
DM
Drain-Source Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and Storage
Temperature Range
T
J
, T
STG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
62.5
/W
C
a
a
a
a
b
55
1.7
1
25
R
JA
4.8
4.1
30
25 C
70 C
Ta= 25 C
Ta=70 C
1.44
A
Limit
Drain-Source Voltage Rating
60
V
Vspike
d
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。