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參數(shù)資料
| 型號(hào)： | STH8NA80FI |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| 中文描述： | ? -通道增強(qiáng)型功率MOS晶體管 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | STH8NA80FI |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
(di/dt)
on
Turn-on Time
Rise Time
V
DD
= 400 V
R
G
= 4.7
V
DD
= 640 V
R
G
= 47
I
D
= 4 A
V
GS
= 10 V
I
D
= 8 A
V
GS
= 10 V
20
28
28
38
ns
ns
Turn-on Current Slope
170
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 400 V
I
D
= 8 A
V
GS
= 10 V
75
10
35
100
nC
nC
nC
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
Parameter
Test Conditions
Min.
Typ.
18
20
25
Max.
25
28
35
Unit
ns
ns
ns
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 640 V
R
G
= 4.7
I
D
= 8 A
V
GS
= 10 V
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
7.2
28.8
A
A
V
SD
(
)
t
rr
Forward On Voltage
I
SD
= 7.2 A
V
GS
= 0
1.6
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 7.5 A
V
DD
= 100 V
di/dt = 100 A/
μ
s
T
j
= 150
o
C
850
17
40
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STW8NA80 STH8NA80FI
3/6
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參數(shù)描述 |
|---|---|
| STH8NB90 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh⑩ MOSFET |
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| STH9N80FI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.6A I(D) | TO-218VAR |
| STH9NA60FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
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