參數(shù)資料
型號: STH7NA100FI
廠商: 意法半導(dǎo)體
英文描述: N-Channel Enhancement Mode Power MOS Transistors(N溝道增強模式功率MOS晶體管)
中文描述: N溝道增強模式功率MOS晶體管(不適用溝道增強模式功率馬鞍山晶體管)
文件頁數(shù): 2/6頁
文件大?。?/td> 75K
代理商: STH7NA100FI
THERMAL DATA
TO-247
ISOWATT218
R
thj-case
Thermal Resistance Junction-case Max
0.65
1.78
o
C/W
o
C/W
o
C/W
o
C
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
30
0.1
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
7
A
E
AS
800
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A V
GS
= 0
1000
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating T
c
= 100
o
C
50
250
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
V
DS
= V
GS
I
D
= 250
μ
A
2.25
3
3.75
V
R
DS(on)
V
GS
= 10V I
D
= 3.5 A
1.45
1.7
I
D(on)
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
7
A
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 3.5 A
5
7
S
C
iss
C
oss
C
rss
V
DS
= 25 V f = 1 MHz V
GS
= 0
3170
270
76
4100
351
99
pF
pF
pF
STW7NA100-STH7NA100FI
2/6
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