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參數(shù)資料
| 型號： | STH60N10FI |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| 中文描述： | ? -通道增強型功率MOS器件 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 246K |
| 代理商： | STH60N10FI |
THERMAL DATA
TO-218/TO-247
ISOWATT218
R
thj-case
Thermal Resistance Junction-case
Max
0.75
1.79
o
C/W
o
C/W
o
C/W
C
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Typ
30
0.1
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
δ
< 1%)
60
A
E
AS
720
mJ
E
AR
180
mJ
I
AR
37
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A
V
GS
= 0
100
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
V
GS
=
±
20 V
T
c
= 125
o
C
250
1000
±
100
μ
A
μ
A
nA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON (
)
Symbol
Parameter
Test Conditions
I
D
= 250
μ
A
I
D
= 30 A
I
D
= 30 A
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
2
2.9
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
V
GS
= 10 V
T
c
= 100
o
C
0.02
0.025
0.05
A
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
60
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 30 A
25
35
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
4000
1100
250
5000
1400
350
pF
pF
pF
STH60N10/FI STW60N10
2/11
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