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參數(shù)資料
| 型號(hào)： | STH60N10 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| 中文描述： | ? -通道增強(qiáng)型功率MOS器件 |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大?。?/td> | 246K |
| 代理商： | STH60N10 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 80 V
R
G
= 50
(see test circuit, figure 3)
V
DD
= 80 V
R
G
= 50
(see test circuit, figure 5)
V
DD
= 80 V
I
D
= 30 A
V
GS
= 10 V
90
270
130
380
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 60 A
V
GS
= 10 V
270
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 30 A
V
GS
= 10 V
120
16
60
170
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 80 V
R
G
= 50
(see test circuit, figure 5)
I
D
= 60 A
V
GS
= 10 V
200
210
410
280
290
570
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
60
240
A
A
V
SD
(
)
t
rr
I
SD
= 60 A
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
o
C
1.6
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 60 A
V
DD
= 30 V
(see test circuit, figure 5)
180
1
11
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5%
(
) Pulse width limited by safe operating area
Safe Operating Areas For TO-218 and TO-247
Safe Operating Areas For ISOWATT218
STH60N10/FI STW60N10
3/11
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