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參數(shù)資料
| 型號： | STGP7NB60HDFP |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel 7A-600V- TO-220/FP PowerMESH IGBT(N溝道絕緣柵雙極晶體管) |
| 中文描述： | N溝道第7A - 600V的TO-220/FP PowerMESH IGBT的（不適用溝道絕緣柵雙極晶體管） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 108K |
| 代理商： | STGP7NB60HDFP |
THERMAL DATA
TO-220
TO-220FP
R
thj-case
Thermal Resistance Junction-case
Max
1.56
3.57
o
C/W
o
C/W
o
C/W
R
thj-amb
R
thc-sink
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Max
Typ
62.5
0.5
ELECTRICAL CHARACTERISTICS
(T
j
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-Emitter
Breakdown Voltage
Collector cut-off
(V
GE
= 0)
I
C
= 250
μ
A
V
GE
= 0
600
V
I
CES
V
CE
= Max Rating
V
CE
= Max Rating
V
GE
=
±
20 V
T
j
=
T
j
= 125
o
C
25
o
C
250
2000
μ
A
μ
A
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
CE
= 0
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
Gate Threshold
Voltage
Collector-Emitter
Saturation Voltage
V
CE
= V
GE
I
C
= 250
μ
A
3
5
V
V
CE(SAT)
V
GE
= 15 V
V
GE
= 15 V
I
C
= 7 A
I
C
= 7 A
T
j
= 125
o
C
2.3
1.9
2.8
V
V
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
CE
=25 V
I
C
= 7 A
3.5
5
S
C
ies
C
oes
C
res
V
CE
= 25 V
f = 1 MHz
V
GE
= 0
390
45
10
560
68
15
730
90
20
pF
pF
pF
Q
G
Q
GE
Q
GC
V
CE
= 480 V
I
C
= 7 A
V
GE
= 15 V
42
7.9
17.6
55
nC
nC
nC
I
CL
Latching Current
V
clamp
= 480 V
T
j
= 150
o
C
R
G
=10
28
A
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
(di/dt)
on
Delay Time
Rise Time
V
CC
= 480 V
V
GE
= 15 V
V
CC
= 480 V
R
G
= 10
T
j
= 125
o
C
I
C
= 7 A
R
G
= 10
I
C
= 7 A
V
GE
= 15 V
15
48
ns
ns
E
on
(
H
)
Turn-on Current Slope
Turn-on
Switching Losses
160
185
A/
μ
s
μ
J
STGP7NB60HD/FP
2/9
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