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參數(shù)資料
| 型號： | STGD7NB60HT4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 7A - 600V - DPAK POWERMESH IGBT |
| 中文描述： | N溝道第7A - 600V的- IGBT的DPAK封裝POWERMESH |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 327K |
| 代理商： | STGD7NB60HT4 |
STGD7NB60H
2/9
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
BR(CES)
Collectro-Emitter Breakdown
Voltage
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, T
C
= 125 °C
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
ON
(1)
Symbol
V
GE(th)
V
CE(sat)
DYNAMIC
Symbol
SWITCHING ON
Symbol
t
d(on)
t
r
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
2.27
100
1.5
°C/W
°C/W
°C/W
Test Conditions
I
C
= 250 μA, V
GE
= 0
Min.
600
Typ.
Max.
Unit
V
V
CE
= Max Rating, T
C
= 25 °C
10
μA
100
μA
V
GE
= ± 20V , V
CE
= 0
±100
nA
Parameter
Test Conditions
V
CE
= V
GE
, I
C
= 250μA
V
GE
= 15V, I
C
= 7 A
V
GE
= 15V, I
C
= 7 A, Tj =125°C
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
3
5
V
Collector-Emitter Saturation
Voltage
2.3
2.8
V
1.9
V
Parameter
Test Conditions
V
CE
= 25 V
,
I
C
=3 A
V
CE
= 25V, f = 1 MHz, V
GE
= 0
Min.
Typ.
Max.
Unit
g
fs
C
ies
C
oes
C
res
Forward Transconductance
3.5
5
S
Input Capacitance
560
pF
Output Capacitance
68
pF
Reverse Transfer
Capacitance
15
pF
Q
g
Q
ge
Q
gc
I
CL
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480V, I
C
= 7 A,
V
GE
= 15V
42
7.9
17.6
55
nC
nC
nC
Latching Current
V
clamp
= 480 V
,
Tj = 150°C
R
G
= 10
28
A
Parameter
Test Conditions
V
CC
= 480 V, I
C
= 7 A
R
G
= 10
, V
GE
= 15 V
V
CC
= 480 V, I
C
= 7 A R
G
=10
V
GE
= 15 V,Tj = 125°C
Min.
Typ.
Max.
Unit
Turn-on Delay Time
Rise Time
15
48
ns
ns
(di/dt)
on
Eon
Turn-on Current Slope
Turn-on Switching Losses
160
70
A/μs
μJ
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGD7NB60K | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGD7NB60K_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 7A - TO-220 / DPAK Short circuit rated PowerMESH TM IGBT |
| STGD7NB60KT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD7NB60MT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD7NB60S | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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