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參數(shù)資料
| 型號： | STGD5NB120SZ |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH? IGBT |
| 中文描述： | N溝道5A條- 1200伏的DPAK /像是iPak內(nèi)部鉗位PowerMESH？ IGBT的 |
| 文件頁數(shù)： | 13/13頁 |
| 文件大小： | 350K |
| 代理商： | STGD5NB120SZ |
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STGD5NB120SZ-1 - STGD5NB120SZ
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相關(guān)PDF資料 |
PDF描述 |
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| STGD5NB120SZT4 | N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH? IGBT |
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| STGD7NB60F | N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT |
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| STGD7NB60H-1 | N-CHANNEL 7A - 600V IPAK PowerMESH IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGD5NB120SZ-1 | 功能描述:IGBT 晶體管 5 A 1200V LOW DROP INTERN CLAMPED IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD5NB120SZT4 | 功能描述:IGBT 晶體管 N-Ch 1200 Volt 5 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD6M65DF2 | 功能描述:IGBT Trench Field Stop 650V 12A 88W Surface Mount DPAK 制造商:stmicroelectronics 系列:M 包裝:剪切帶（CT） 零件狀態(tài):在售 IGBT 類型:溝槽型場截止 電壓 - 集射極擊穿（最大值）:650V 電流 - 集電極（Ic）（最大值）:12A 脈沖電流 - 集電極 (Icm):24A 不同?Vge，Ic 時的?Vce（on）:2V @ 15V，6A 功率 - 最大值:88W 開關(guān)能量:36μJ（開），200μJ（關(guān)） 輸入類型:標準 柵極電荷:21.2nC 25°C 時 Td（開/關(guān)）值:15ns/90ns 測試條件:400V，6A，22 歐姆，15V 反向恢復時間（trr）:140ns 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-252-3，DPak（2 引線+接片），SC-63 供應(yīng)商器件封裝:DPAK 標準包裝:1 |
| STGD6NC60H | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 7A - DPAK Very fast PowerMESH TM IGBT |
| STGD6NC60H_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 7A - DPAK Very fast PowerMESH TM IGBT |
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