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參數(shù)資料
| 型號(hào)： | STGD3NB60M |
| 英文描述： | 58V SURGECTOR, DO-214AA |
| 中文描述： | N溝道600V的IGBT的第3A TO-220/DPAK POWERMESH |
| 文件頁(yè)數(shù)： | 10/10頁(yè) |
| 文件大小： | 502K |
| 代理商： | STGD3NB60M |
STGD3NB60HD
10/10
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its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
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previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STGD3NB60MT4 | Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:100pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V |
| STGP3NB60M | N-CHANNEL 600V 3A TO-220/DPAK POWERMESH IGBT |
| STGP10N50A | Transient Surge Protection Thyristor; Thyristor Type:Sidac; Package/Case:DO-214AA; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:65V; Capacitance:70pF; Forward Voltage:5V; Holding Current:120mA; Leakage Current:5uA RoHS Compliant: NA |
| STH221 | Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:170V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V |
| STH26N25 | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 26A I(D) | TO-218 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGD3NB60MT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 3 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD3NB60S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH⑩ IGBT |
| STGD3NB60SD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - DPAK PowerMESH TM IGBT |
| STGD3NB60SD_04 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - DPAK PowerMESH TM IGBT |
| STGD3NB60SD-1 | 功能描述:IGBT 晶體管 N Ch 3A 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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