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參數(shù)資料
| 型號： | STGD3NB60K |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| 中文描述： | N溝道3A條- 600V的- IGBT的TO-220/DPAK/D2PAK PowerMESH⑩ |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 707K |
| 代理商： | STGD3NB60K |
3/14
STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD
SWITCHING PARAMETERS
Symbol
g
fs
Forward Transconductance
C
ies
C
oes
C
res
Reverse Transfer
Capacitance
Q
g
Q
ge
Q
gc
Gate-Collector Charge
tscw
Short Circuit Withstand Time
COLLECTOR-EMITTER DIODE (“D” VERSION)
Symbol
Parameter
V
f
Forward On-Voltage
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Parameter
Test Conditions
V
CE
= 25V, Ic = 3 A
V
CE
= 25V, f = 1 MHz, V
GE
= 0
Min.
Typ.
Max.
Unit
2.4
S
Input Capacitance
Output Capacitance
218
33
5.8
pF
pF
pF
Total Gate Charge
Gate-Emitter Charge
V
CE
= 480V, I
C
= 3 A,
V
GE
= 15V
14
3.3
7.5
18
nC
nC
nC
V
ce
= 0.5 V
BR(CES)
, V
GE
=15V
,
Tj = 125°C , R
G
= 10
V
CC
= 480 V, I
C
= 3 A
R
G
= 10
, V
GE
= 15 V
V
CC
= 480 V, I
C
= 3 A R
G
=10
V
GE
= 15 V,Tj = 125°C
V
cc
= 480 V, I
C
= 3 A,
R
GE
= 10
, V
GE
= 15 V
Tj = 25 °C
10
μs
t
d(on)
t
r
Turn-on Delay Time
Rise Time
14
5
ns
ns
(di/dt)
on
Eon
Turn-on Current Slope
Turn-on Switching Losses
520
30
A/μs
μ
J
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
E
off
(**)
E
ts
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
E
off
(**)
E
ts
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
122
26.5
33
100
58
85
ns
ns
ns
ns
μ
J
μ
J
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
V
cc
= 480 V, I
C
= 3 A,
R
GE
= 10
, V
GE
= 15 V
Tj = 125 °C
210
66
100
120
165
195
ns
ns
ns
ns
μ
J
μ
J
Test Conditions
I
f
= 1.5 A
I
f
= 1.5 A, Tj = 125 °C
I
f
= 3 A ,V
R
= 35 V,
Tj =125°C, di/dt = 100A/
μ
s
Min.
Typ.
Max.
1.8
Unit
1.31
0.95
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
45
70
2.7
ns
nC
A
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PDF描述 |
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| STGB7NB60HD | N-CHANNEL 7A - 600V DPAK PowerMESH IGBT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGD3NB60KD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 6A - 600V DPAK SHORT CIRCUIT PROOF POWERMESH IGBT |
| STGD3NB60KT4 | 制造商:STMicroelectronics 功能描述: |
| STGD3NB60M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 3A TO-220/DPAK POWERMESH IGBT |
| STGD3NB60MT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 3 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD3NB60S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH⑩ IGBT |
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