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參數(shù)資料
| 型號： | STGB3NB60K |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| 中文描述： | N溝道3A條- 600V的- IGBT的TO-220/DPAK/D2PAK PowerMESH⑩ |
| 文件頁數(shù)： | 14/14頁 |
| 文件大?。?/td> | 707K |
| 代理商： | STGB3NB60K |
STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD
14/14
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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相關PDF資料 |
PDF描述 |
|---|---|
| STGD3NB60KT4 | N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGD3NB60K | N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGB7NB60HDT4 | Transient Surge Protection Thyristor; Thyristor Type:Sidac; Leaded Process Compatible:No; Package/Case:DO-214AA; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:25V; Capacitance:110pF RoHS Compliant: No |
| STGB7NB60HD | N-CHANNEL 7A - 600V DPAK PowerMESH IGBT |
| STGB7NB60KD | N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STGB3NB60KD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGB3NB60KDT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 6 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB3NB60MD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT |
| STGB3NB60MDT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 3 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGB3NB60SD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT |
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