參數(shù)資料
型號(hào)： STE53NA50
廠商： 意法半導(dǎo)體
英文描述： N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
中文描述： ? -快速通道增強(qiáng)型功率MOS器件
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 275K
代理商： STE53NA50
STE53NC50
2/8
THERMAL DATA
Rthj-case
Rthc-h
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON
(1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
Thermal Resistance Junction-case Max
Thermal Resistance Case-heatsink with Conductive
Grease Applied
0.272
0.05
°C/W
°C/W
Parameter
Max Value
53
Unit
A
1043
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
500
Typ.
Max.
Unit
V
V
DS
= Max Rating
10
μA
100
μA
V
GS
= ± 30V
±100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 27A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
2
3
4
V
Static Drain-source On
Resistance
0.07
0.08
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 15 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
42
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
C
rss
Input Capacitance
11.2
nF
Output Capacitance
1350
pF
Reverse Transfer
Capacitance
115
pF
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