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參數(shù)資料
| 型號(hào)： | STD9N10LT4 |
| 元件分類： | 熱敏電阻 |
| 英文描述： | Resettable Fuse; Series:2920L; Thermistor Type:PTC; Operating Voltage Max:33VDC; Holding Current:1.5A; Tripping Current:3A; External Depth:1.25mm; Length:7.98mm; Initial Resistance Min:0.08ohm; Initial Resistance Max:0.23ohm RoHS Compliant: Yes |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 9A條（?。﹟對(duì)252AA |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | STD9N10LT4 |
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STD9N10L
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD9NM60 | Resettable Fuse; Series:2920L; Thermistor Type:PTC; Operating Voltage Max:15VDC; Holding Current:2A; Tripping Current:4A; External Depth:1.25mm; Length:7.98mm; Initial Resistance Min:0.05ohm; Initial Resistance Max:0.125ohm RoHS Compliant: Yes |
| STD9NM60-1 | Resettable Fuse; Series:2920L; Thermistor Type:PTC; Operating Voltage Max:15VDC; Holding Current:2.5A; Tripping Current:5A; External Depth:1.25mm; Length:7.98mm; Initial Resistance Min:0.035ohm; Initial Resistance Max:0.085ohm RoHS Compliant: Yes |
| STD9NM60T4 | SCR Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On State RMS Current, IT(rms):800mA; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:200uA RoHS Compliant: Yes |
| STP9N30 | TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 9A I(D) | TO-220AB |
| STP9NM60 | N-CHANNEL 600V 0.55 OHM 8.3A TO-220/DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD9N10T4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR |
| STD9N40M2 | 功能描述:MOSFET N-CH 400V 6A DPAK 制造商:stmicroelectronics 系列:MDmesh? II Plus 包裝:剪切帶（CT） 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:400V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:6A（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:800 毫歐 @ 3A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:4V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:8.8nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:270pF @ 100V 功率 - 最大值:60W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-252-3，DPak（2 引線+接片），SC-63 供應(yīng)商器件封裝:DPAK 標(biāo)準(zhǔn)包裝:1 |
| STD9N60M2 | 制造商:STMicroelectronics 功能描述:POWER MOSFET - Tape and Reel 制造商:STMicroelectronics 功能描述:MOSFET N-CH 600V 5.5A DPAK 制造商:STMicroelectronics 功能描述:Single N-Channel 650 V 0.78 Ohm 60 W Surface Mount Power Mosfet - DPAK-3 制造商:STMicroelectronics 功能描述:N-channel 600 V 0.78 Ohm 5.5 A MDmesh II Plus low Qg Power MOSFET DPAK 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 600V 5.5A DPAK 制造商:STMicroelectronics 功能描述:N-channel 600 V 0.78 Ohm 5.5 A MDmesh II Plus Power Mosfet - DPAK 制造商:STMicroelectronics 功能描述:600V,0.72,5.5A,N-Channel Power MOSFET 制造商:STMicroelectronics 功能描述:N-channel 600V,0.72Ohm,5.5A Power MOSFET |
| STD9N65M2 | 功能描述:MOSFET N-CH 650V 5A DPAK 制造商:stmicroelectronics 系列:MDmesh?? 包裝:剪切帶（CT） 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:650V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:5A（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:900 毫歐 @ 2.5A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:4V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:10nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:315pF @ 100V 功率 - 最大值:60W 工作溫度:150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-252-3，DPak（2 引線+接片），SC-63 供應(yīng)商器件封裝:DPAK 標(biāo)準(zhǔn)包裝:1 |
| STD9NM40N | 功能描述:MOSFET N-Ch 400V 0.73Ohm 5.6A pwr Mdmesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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