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參數(shù)資料
| 型號： | STD888 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR |
| 中文描述： | 高電流，高性能，低電壓PNP晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 127K |
| 代理商： | STD888 |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-Case Max
8.33
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= -30 V
V
CB
= -30 V T
j
= 100
o
C
-10
-1
nA
μ
A
nA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
EB
= -6 V
-10
I
C
= -10 mA
-30
V
I
C
= -100
μ
A
-60
V
I
E
= -100
μ
A
-6
V
I
C
= -500 mA I
B
= -5 mA
I
C
= -2 A I
B
= -50 mA
I
C
= -5 A I
B
= -250 mA
I
C
= -6 A I
B
= -250 mA
I
C
= -8 A I
B
= -400 mA
I
C
= -10 A I
B
= -500 mA
I
C
= -2 A I
B
= -50 mA
I
C
= -6 A I
B
= -250 mA
-0.15
-0.25
-0.70
-0.70
-1
-1.5
V
V
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
-1.1
-1.4
V
V
h
FE
DC Current Gain
I
C
= -10 mA V
CE
= -1 V
I
C
= -500 mA V
CE
= -1 V
I
C
= -5 A V
CE
= -1 V
I
C
= -5 A V
CE
= -1V
T
j
= 100
o
C
I
C
= -8 A V
CE
= -1 V
I
C
= -10 A V
CE
= -1 V
I
C
= -3 A I
B1
= - I
B2
= -60 mA
V
CC
= -20 V (see figure 1)
150
150
75
75
40
15
200
200
100
100
55
35
300
t
d
t
r
t
s
t
f
RESISTIVE LOAD
Delay Time
RiseTime
StorageTime
Fall Time
180
160
250
80
220
210
300
100
ns
ns
ns
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle
≤
1.5 %
STD888
2/6
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