- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382558 > STD7NK40 (意法半導體) N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | STD7NK40 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET |
| 中文描述： | N溝道400V - 0.85ohm - 5.4A TO-220/TO-220FP/DPAK/IPAK齊納保護SuperMESH⑩功率MOSFET |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 605K |
| 代理商： | STD7NK40 |
3/13
STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 50μA
R
DS(on)
Static Drain-source On
Resistance
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
SWITCHING ON
Symbol
t
d(on)
t
r
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Test Conditions
I
D
=1 mA, V
GS
= 0
Min.
400
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
50
μA
μA
V
GS
= ± 20V
±10
μA
3
3.75
4.5
V
V
GS
= 10V, I
D
= 2.7 A
0.85
1
Parameter
Test Conditions
V
DS
=15 V
,
I
D
= 2.7 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
3.5
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
535
82
18
pF
pF
pF
C
oss eq.
(3)
V
GS
= 0V, V
DS
= 0V to 400V
53
pF
Parameter
Test Conditions
V
DD
= 200 V, I
D
= 2.7 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 320V, I
D
= 5.4 A,
V
GS
= 10V
Min.
Typ.
15
15
Max.
Unit
ns
ns
Turn-on Delay Time
Rise Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
19
4
10
26
nC
nC
nC
Parameter
Test Conditions
V
DD
= 200 V, I
D
= 2.7A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 320V, I
D
= 5.4A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
Min.
Typ.
30
12
Max.
Unit
ns
ns
Turn-off Delay Time
Fall Time
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
12
10
20
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
5.4
21.6
Unit
A
A
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
I
SD
= 5.4 A, V
GS
= 0
I
SD
= 5.4 A, di/dt = 100A/μs
V
DD
= 50V, T
j
= 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
220
990
9
ns
nC
A
相關PDF資料 |
PDF描述 |
|---|---|
| STD7NK40Z-1 | N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET |
| STD888 | HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR |
| STDD15-04WFILM | Resettable Fuse; Series:30R; Thermistor Type:PTC; Operating Voltage Max:30V; Holding Current:0.9A; Tripping Current:1.8A; Length:12.2mm; Lead Pitch:5.1mm; Initial Resistance Min:0.07ohm; Initial Resistance Max:0.22ohm RoHS Compliant: NA |
| STDD15-04W | LOW CAPACITANCE DETECTION DIODE |
| STDD15-05W | LOW CAPACITANCE DETECTION DIODE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STD7NK40Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET |
| STD7NK40Z-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET |
| STD7NK40ZT4 | 功能描述:MOSFET N-Ch 400 Volt 5.4 A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD7NM50N | 功能描述:MOSFET N Ch 500V 0.70 5A Power MDmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD7NM50N-1 | 功能描述:MOSFET N Ch 500V 0.70 5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。