參數(shù)資料
型號： STD616A
廠商： 意法半導(dǎo)體
英文描述： HIGH VOLTAGE NPN POWER TRANSISTOR
中文描述： 高壓NPN電源晶體管
文件頁數(shù)： 2/5頁
文件大?。?/td> 42K
代理商： STD616A
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
6.25
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0 V)
V
CE
= 1000 V
V
CE
= 1000 V
T
j
= 125
o
C
50
0.5
μ
A
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
Collector-Base
Sustaining Voltage
Collector-Emitter
Saturation Voltage
I
C
= 100 mA
L = 25 mH
450
V
V
BEO
I
C
= 1 mA
12
V
V
CE(sat)
I
C
= 250 mA
I
C
= 0.8 A
I
B
= 65 mA
I
B
= 250 mA
0.3
0.5
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 250 mA
I
C
= 0.8 A
I
B
= 65 mA
I
B
= 250 mA
1.0
1.2
V
V
h
FE
DC Current Gain
I
C
= 200
μ
A
I
C
= 300 mA
I
C
= 480 mA
I
C
= 1.6 A
V
CC
= 250 V
I
B1
= 65 mA
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
I
C
= 250 mA
I
B2
= -130 mA
17
25
12
4
t
on
t
s
t
f
RESISTIVE LOAD
Turn On Time
Storage Time
Fall Time
0.2
5
0.65
μ
s
μ
s
μ
s
t
on
t
s
t
f
RESISTIVE LOAD
Turn On Time
Storage Time
Fall Time
V
CC
= 250 V
I
B1
= 160 mA
I
C
= 0.8 A
I
B2
= -0.4 A
1
2.5
0.35
μ
s
μ
s
μ
s
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
V
cl
= 300 V
I
B1
= 65 mA
L = 200
μ
H
V
cl
= 300 V
I
B1
= 160 mA
L = 200
μ
H
I
C
= 250 mA
I
B2
= -130 mA
5
0.5
μ
s
μ
s
t
s
t
f
INDUCTIVE LOAD
Turn On Time
Storage Time
Fall Time
I
C
= 0.8 A
I
B2
= -0.4 A
2.5
0.25
μ
s
μ
s
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
STD616A-1
2/5
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