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參數(shù)資料
| 型號： | STD5NM50 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 500V - 0.7ohm - 7.5A DPAK/IPAK MDmesh⑩Power MOSFET |
| 中文描述： | N溝道500V - 0.7ohm - 7.5A的DPAK封裝/像是iPak的MDmesh⑩功率MOSFET |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 463K |
| 代理商： | STD5NM50 |
STD5NM50/STD5NM50-1
2/10
THERMAL DATA
Rthj-case
Rthj-amb
T
l
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON
(1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.25
100
°C/W
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
2.5
Unit
A
300
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
500
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
μA
10
μA
V
GS
= ±30V
±100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 2.5A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
3
4
5
V
Static Drain-source On
Resistance
0.7
0.8
Parameter
Test Conditions
V
DS
= 25V
x,
I
D
= 2.5A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
3.5
Max.
Unit
S
Forward Transconductance
Input Capacitance
415
pF
Output Capacitance
88
pF
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Gate Input Resistance
12
pF
C
oss eq.
(2)
V
GS
= 0V, V
DS
= 0V to 400V
50
pF
R
G
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD5NM50-1 | 功能描述:MOSFET N-Ch 500 Volt 7.5 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD5NM50T4 | 功能描述:MOSFET N-Ch 500 Volt 7.5 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD5NM50T4 | 制造商:STMicroelectronics 功能描述:Transistor Polarity:N Channel |
| STD5NM60 | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 600V 5A DPAK |
| STD5NM60_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh? Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK |
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