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參數(shù)資料
| 型號(hào)： | STD5NE10-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-251AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 5A條（?。﹟對(duì)251AA |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 43K |
| 代理商： | STD5NE10-1 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 50 V
R
G
= 4.7
(Resistive Load, see fig. 3)
V
DD
= 80 V I
D
= 5 A V
GS
= 10 V
I
D
= 3.5 A
V
GS
= 10 V
6.5
15
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
14
6
4
18
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 50 V
R
G
= 4.7
(Resistive Load, see fig. 3)
V
DD
= 80 V
R
G
= 4.7
(Inductive Load, see fig. 5)
I
D
= 3.5 A
V
GS
= 10 V
25
7
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
I
D
= 7 A
V
GS
= 10 V
7
8
16
ns
ns
ns
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
5
20
A
A
V
SD
(
)
t
rr
I
SD
= 8 A
I
SD
= 5 A
V
DD
= 50 V
(see test circuit, fig. 5)
V
GS
= 0
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
di/dt = 100 A/
μ
s
T
j
= 150
o
C
75
210
5.5
ns
nC
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
SafeOperating Area for
Thermal Impedance
STD5NE10
3/9
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| STD5NE10L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 100V - 0.3 ohm - 5A - DPAK/IPAK STripFET POWER MOSFET |
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| STD5NE10LT4 | 功能描述:MOSFET N-Ch 100 Volt 5.0Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD5NE10T4 | 制造商:STMicroelectronics 功能描述: |
| STD5NK40Z | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 400V 3A DPAK |
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