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參數資料
| 型號： | STD4NK50Z-1 |
| 廠商： | 意法半導體 |
| 英文描述： | Multiconductor Paired ScTP Patch Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Conductor Material:Copper |
| 中文描述： | N溝道500V - 2.4ohm -第3A TO-220/TO-220FP/DPAK/IPAK齊保護的SuperMESH⑩功率MOSFET |
| 文件頁數： | 2/13頁 |
| 文件大?。?/td> | 664K |
| 代理商： | STD4NK50Z-1 |
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1
2/13
ABSOLUTE MAXIMUM RATINGS
Symbol
( ) Pulse width limited by safe operating area
(1) I
SD
≤
3 A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
STP4NK50Z
STP4NK50ZFP
STD4NK50Z
STD4NK50Z-1
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
500
V
500
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
3
3 (*)
3 (*)
A
1.9
1.9 (*)
1.9 (*)
A
12
12 (*)
12 (*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
45
20
45
W
0.36
0.16
0.36
W/°C
V
ESD(G-S)
dv/dt (1)
V
ISO
T
j
T
stg
2800
V
4.5
V/ns
Insulation Withstand Voltage (DC)
-
2500
-
V
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
TO-220
TO-220FP
DPAK
IPAK
2.78
100
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case (Max)
Thermal Resistance Junction-ambient (Max)
2.78
6.25
°C/W
°C/W
°C
62.5
Maximum Lead Temperature For Soldering Purpose
300
Parameter
Max Value
3
Unit
A
120
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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|---|---|
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STD4NK50ZD | 功能描述:MOSFET SuperMESH Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD4NK50ZD-1 | 功能描述:MOSFET N Ch 500V 2.4 Ohm 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD4NK50ZT4 | 功能描述:MOSFET N-Ch 500 Volt 3 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD4NK60Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET |
| STD4NK60Z-1 | 功能描述:MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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