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參數(shù)資料
| 型號： | STD3PS25 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | P-CHANNEL 250V - 2.1 OHM - 3A DPAK/IPAK MESH OVERLAY MOSFET |
| 中文描述： | P溝道250V - 2.1歐姆-第3A的DPAK /像是iPak MOSFET的網(wǎng)格密胺 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 445K |
| 代理商： | STD3PS25 |
3/10
STD3PS25 - STD3PS25-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
t
r
Rise Time
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(4)
V
SD
(5)
t
rr
Q
rr
I
RRM
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
(4) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(5) Pulse width limited by safe operating area
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Test Conditions
V
DD
= 125V, I
D
= 1.5A
R
G
= 4.7
V
GS
= 10V
(Resistive, see Figure 3)
V
DD
= 200V, I
D
= 1.5A,
V
GS
= 10V
Min.
Typ.
12
22
Max.
Unit
ns
ns
Turn-on Delay Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
16
1.4
7.6
21
nC
nC
nC
Parameter
Test Conditions
V
DD
= 200V, I
D
= 1.5A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
29.5
7
Max.
Unit
ns
ns
Turn-off Delay Time
Fall Time
Parameter
Test Conditions
Min.
Typ.
Max.
3
12
Unit
A
A
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
I
SD
= 3A, V
GS
= 0
I
SD
= 0.60A, di/dt = 100A/μs,
V
DD
= 40V, T
j
= 150°C
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Curren
143
806
11
ns
nC
A
Parameter
Test Conditions
Igs=± 500 μA (Open Drain)
Min.
± 25
Typ.
Max.
Unit
V
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|---|---|
| STD3PS25-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:P-CHANNEL 250V - 2.1 OHM - 3A DPAK/IPAK MESH OVERLAY MOSFET |
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