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參數(shù)資料
| 型號： | STD3NM50 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 500V - 2.5ohm - 3A DPAK/IPAK Zener-Protected MDmesh⑩Power MOSFET |
| 中文描述： | N溝道500V - 2.5ohm -第3A的DPAK /像是iPak齊納⑩保護的MDmesh功率MOSFET |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 471K |
| 代理商： | STD3NM50 |
3/10
STD3NM50/STD3NM50-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
Rise Time
t
r
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Test Conditions
V
DD
= 250V, I
D
= 1.5A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 400V, I
D
= 3A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
7
ns
10
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
5.5
nC
Gate-Source Charge
2.5
nC
Gate-Drain Charge
2.4
nC
Parameter
Test Conditions
V
DD
= 480V, I
D
= 3A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
8
ns
Fall Time
9
ns
Cross-over Time
15
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
3
A
Source-drain Current (pulsed)
12
A
Forward On Voltage
I
SD
= 3A, V
GS
= 0
I
SD
= 3A, di/dt = 100A/μs,
V
DD
= 100 V, T
j
= 25°C
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
210
ns
Reverse Recovery Charge
790
nC
Reverse Recovery Current
7.5
A
Reverse Recovery Time
I
SD
= 3A, di/dt = 100A/μs,
V
DD
= 100 V, T
j
= 150°C
(see test circuit, Figure 5)
282
ns
Reverse Recovery Charge
1.1
μC
Reverse Recovery Current
7.7
A
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD3NM50-1 | 制造商:STMicroelectronics 功能描述: |
| STD3NM50T4 | 功能描述:MOSFET N-Ch 500 Volt 3 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3NM60 | 制造商:STMicroelectronics 功能描述:MOSFET N D-PAK 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 600V 3A DPAK |
| STD3NM60-1 | 功能描述:MOSFET N-Ch, 600V-1.3ohms Mdmesh 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3NM60N | 功能描述:MOSFET N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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