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參數(shù)資料
| 型號： | STD3NK80Z |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 800V - 3.8W - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH⑩ Power MOSFET |
| 中文描述： | N溝道800V的- 3.8W -包2.5a TO-220/FP/DPAK/IPAK齊保護的SuperMESH⑩功率MOSFET |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 608K |
| 代理商： | STD3NK80Z |
3/13
STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 50 μA
R
DS(on)
Static Drain-source On
Resistance
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Test Conditions
I
D
= 1 mA, V
GS
= 0
Min.
800
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
50
μA
μA
V
GS
= ± 20V
±10
μA
3
3.75
4.5
V
V
GS
= 10V, I
D
= 1.25 A
3.8
4.5
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
= 1.25 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
2.1
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
485
57
11
pF
pF
pF
C
oss eq.
(3)
V
GS
= 0V, V
DS
= 0V to 640V
22
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 400 V, I
D
= 1.25 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
17
27
36
40
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 640 V, I
D
= 2.5 A,
V
GS
= 10 V
19
3.2
10.8
nC
nC
nC
Parameter
Test Conditions
Min.
Typ.
Max.
2.5
10
Unit
A
A
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
I
SD
= 2.5 A, V
GS
= 0
I
SD
= 2.5 A, di/dt = 100 A/μs
V
DD
= 50 V, T
j
= 25°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
384
1600
8.4
ns
nC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 2.5 A, di/dt = 100 A/μs
V
DD
= 50 V, T
j
= 150°C
(see test circuit, Figure 5)
474
2100
8.8
ns
nC
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD3NK80Z-1 | N-CHANNEL 800V - 3.8W - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH⑩ Power MOSFET |
| STP3NK80Z | N-CHANNEL 800V - 3.8W - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH⑩ Power MOSFET |
| STD3NK90ZFP | N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET |
| STP3NK90Z | N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET |
| STD3NK90Z | N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD3NK80Z_09 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH? Power MOSFET |
| STD3NK80Z-1 | 功能描述:MOSFET N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3NK80Z-1-H | 制造商:ST 功能描述:N-channel 800 V, 3.8 |
| STD3NK80ZT4 | 功能描述:MOSFET N-Ch 800 Volt 2.5A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3NK90Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET |
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