- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382557 > STD3NB50-1 (意法半導(dǎo)體) ***** BITTE 4969170 VERWENDEN***** PDF資料下載
參數(shù)資料
| 型號(hào)： | STD3NB50-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | ***** BITTE 4969170 VERWENDEN***** |
| 中文描述： | ***** BITTE 4969170 VERWENDEN ***** |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 75K |
| 代理商： | STD3NB50-1 |
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
2.5
100
1.5
275
o
C/W
oC/W
o
C/W
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 50 V)
3
A
E
AS
40
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
I
D
= 250
μ
A V
GS
= 0
500
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating T
c
= 125
o
C
V
GS
=
±
30 V
1
50
μ
A
μ
A
nA
I
GSS
±
100
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max
V
DS
= V
GS
I
D
= 250
μ
A
3
4
5
V
R
DS(on)
V
GS
= 10V I
D
=1.9 A
2.5
2.8
I
D(on)
V
GS
= 10 V
3.8
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 1.9 A
2
2.3
S
C
iss
C
oss
C
rss
V
DS
= 25 V f = 1 MHz V
GS
= 0
400
62
7.5
520
84
10
pF
pF
pF
STD3NB50
2/6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD3NB50 | N - CHANNEL 500V - 2.5ohm - 3A - IPAK/DPAK PowerMESH MOSFET |
| STD3NC50 | N - CHANNEL 500V - 2.4ohm - 3A TO-251/TO-252 PowerMESHII MOSFET |
| STD3NK80ZT4 | N-CHANNEL 800V - 3.8 OHM - 2.5A TO-220/FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET |
| STF3NK80Z | N-CHANNEL 800V - 3.8W - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH⑩ Power MOSFET |
| STD3NK80Z | N-CHANNEL 800V - 3.8W - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH⑩ Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD3NB50T4 | 功能描述:MOSFET N-CH 500V 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3NC50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 500V - 2.4ohm - 3A TO-251/TO-252 PowerMESHII MOSFET |
| STD3NC50-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 3.2A I(D) | TO-251AA |
| STD3NC60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh⑩II MOSFET |
| STD3NC60-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh⑩II MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。