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參數(shù)資料
| 型號： | STD2NK70Z-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 700 V - 6 W - 1.6 A DPAK/IPAK Zener-Protected SuperMESHTM MOSFET |
| 中文描述： | N溝道700 V的- 6 W功率- 1.6采用DPAK /像是iPak齊納MOSFET的保護SuperMESHTM |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 305K |
| 代理商： | STD2NK70Z-1 |
STD2NK70Z - STD2NK70Z-1
2/12
Table 3: Absolute Maximum ratings
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 K
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25
°
C
I
D
Drain Current (continuous) at T
C
= 100
°
C
I
DM
(*)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25
°
C
Derating Factor
V
ESD(G-S)
Gate source ESD (HBM-C = 100pF, R = 1.5 K
)
dv/dt (1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(*) Pulse width limited by safe operating area
(1) I
SD
≤
1.6 A, di/dt
≤
200 A/μs, VDD
≤
V
(BR)DSS
Table 4: Thermal Data
Rthj-case
Thermal Resistance Junction-case Max
Rthj-amb
T
l
Maximum Lead Temperature For Soldering Purpose
Table 5: Avalanche Characteristics
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
Table 6:
Gate-Source Zener Diode
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device
’
s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device
’
s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
700
V
700
±
30
1.6
V
V
A
1
A
6.4
A
45
W
0.36
W/
°
C
2000
V
4.5
V/ns
-55 to 150
°
C
2.78
°
C/W
Thermal Resistance Junction-ambient Max
100
300
°
C/W
°
C
Parameter
Max Value
1.6
Unit
A
110
mJ
Parameter
Test Condition
Igs=
±
1mA (Open Drain)
Min.
30
Typ.
Max
Unit
A
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|---|---|
| STD2NK70ZT4 | 功能描述:MOSFET N-Ch 700 Volt 1.6Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2NK90Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V-5W-2.1A TO-220/DPAK/IPAK Zener-Protected SuperMESHTM MOSFET |
| STD2NK90Z_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH? MOSFET |
| STD2NK90Z-1 | 功能描述:MOSFET N-Ch, 900V-5ohms Zener SuperMESH 2.1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2NK90ZT4 | 功能描述:MOSFET N-Ch 900 Volt 2.1Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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