參數(shù)資料
型號: STD25NF10L
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 100V - 0.030 ohm - 25A DPAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET
中文描述: N溝道100V的- 0.030歐姆- 25A條的DPAK低柵極電荷STripFET⑩二功率MOSFET
文件頁數(shù): 2/9頁
文件大?。?/td> 451K
代理商: STD25NF10L
STD25NF10L
2/9
THERMAL DATA
(#)
When Mounted on 1 inch
2
FR-4 board, 2 oz of Cu.
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(*
)
DYNAMIC
Rthj-case
Rthj-pcb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-pcb
(#)
Maximum Lead Temperature For Soldering Purpose
Max
Max
1.5
50
275
°C/W
°C/W
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 μA, V
GS
= 0
100
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125°C
1
10
μA
μA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 16 V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 μA
1
2.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 12.5 A
I
D
= 12.5 A
0.030
0.035
0.035
0.040
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
= 15 V
I
D
= 12.5 A
24
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V f = 1 MHz V
GS
= 0
1710
250
110
pF
pF
pF
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