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參數(shù)資料
| 型號(hào)： | STD22NM20N |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 200V - 0.088ohm - 22A DPAK ULTRA LOW GATE CHARGE MDmesh II MOSFET |
| 中文描述： | N溝道200伏- 0.088ohm - 22A條的DPAK超低柵極電荷的MDmesh MOSFET的二 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 330K |
| 代理商： | STD22NM20N |
3/10
STD22NM20N
ELECTRICAL CHARACTERISTICS
(T
CASE
=25
°
C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125
°
C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
R
DS(on)
Static Drain-source On
Resistance
Table 7: Dynamic
Symbol
g
fs
(2)
C
iss
C
oss
C
rss
(**) C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Table 8: Source Drain Diode
Symbol
I
SD
I
SDM
(1)
Source-drain Current (pulsed)
V
SD
(2)
Forward On Voltage
t
rr
Q
rr
I
RRM
Reverse Recovery Current
t
rr
Q
rr
I
RRM
Reverse Recovery Current
(1) Pulse width limited by safe operating area.
(2) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Test Conditions
I
D
= 1mA, V
GS
= 0
Min.
200
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
10
μA
μA
V
GS
= ± 20V
100
nA
3.5
4.2
5
V
V
GS
= 10V, I
D
= 11 A
0.088
0.105
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
=11 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
8
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitiance
Gate Input Resistance
800
330
130
pF
pF
pF
C
oss eq. (**)
V
GS
= 0 V, V
DS
= 0 V to 400 V
225
pF
R
G
f= 1MHz Gate DC Bias = 0
Test Sgnal Level = 20 mV
Open Drain
V
DD
= 100 V, I
D
= 11 A
R
G
= 4.7
V
GS
= 10 V
(see Figure 15)
5
t
d(on)
t
r
t
r(Voff)
t
f
Q
g
Q
gs
Q
gd
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
40
15
40
11
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 100 V, I
D
= 20 A,
V
GS
= 10 V
(see Figure 19)
32
6
25
50
nC
nC
nC
Parameter
Test Conditions
Min.
Typ.
Max.
22
88
Unit
A
A
Source-drain Current
I
SD
= 20 A, V
GS
= 0
I
SD
= 20 A, di/dt = 100 A/μs
V
DD
= 100V, T
j
= 25
°
C
(see test circuit, Figure 17)
1.3
V
Reverse Recovery Time
Reverse Recovery Charge
160
960
128
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 20 A, di/dt = 100 A/μs
V
DD
= 100V, T
j
= 150
°
C
(see test circuit, Figure 17)
225
1642
15
ns
μC
A
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