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參數(shù)資料
| 型號(hào)： | STD20NE03L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET |
| 中文描述： | ? -通道增強(qiáng)型“特征尺寸單”功率MOSFET |
| 文件頁(yè)數(shù)： | 9/9頁(yè) |
| 文件大?。?/td> | 105K |
| 代理商： | STD20NE03L |
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consequencesof use ofsuch informationnor for any infringement of patentsor otherrights of third parties whichmay resultsfrom its use. No
license is grantedby implicationor otherwise underany patent or patentrights ofSGS-THOMSON Microelectronics. Specifications mentioned
in this publicationare subjectto change withoutnotice.This publication supersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronics productsare notauthorized for useascriticalcomponents in lifesupportdevices or systems withoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
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STD20NE03L
9/9
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD20NE03L1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-251AA |
| STD20NE03L-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-251AA |
| STD20NE03LT4 | 制造商:STMicroelectronics 功能描述: |
| STD20NE06 | 功能描述:MOSFET RO 511-STD20NF06 511BCY79IX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD20NE06T4 | 功能描述:MOSFET N-CH 60V 20A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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