參數(shù)資料
型號: STD20NE03L-1
廠商: 意法半導體
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-251AA
中文描述: 晶體管| MOSFET的| N溝道| 30V的五(巴西)直| 20A條(?。﹟對251AA
文件頁數(shù): 2/9頁
文件大?。?/td> 105K
代理商: STD20NE03L-1
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
3
100
1.5
275
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 25V)
20
A
E
AS
140
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
μ
A
V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
o
C
V
GS
=
±
15 V
T
c
= 125
1
10
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
V
DS
= V
GS
I
D
= 250
μ
A
1
1.8
2.5
V
R
DS(on)
V
GS
= 10V
V
GS
= 5V
I
D
= 10 A
I
D
= 10 A
0.016
0.02
0.026
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
20
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 10 A
12
18
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1850
450
160
2400
590
210
pF
pF
pF
STD20NE03L
2/9
相關PDF資料
PDF描述
STD20NE03L N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET
STD22NM20NT4 N-CHANNEL 200V - 0.088ohm - 22A DPAK ULTRA LOW GATE CHARGE MDmesh II MOSFET
STD22NM20N N-CHANNEL 200V - 0.088ohm - 22A DPAK ULTRA LOW GATE CHARGE MDmesh II MOSFET
STD2HNK60Z-1 N-CHANNEL 600V - 4.4ヘ - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH MOSFET
STQ2HNK60ZR-AP N-CHANNEL 600V - 4.4ヘ - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH MOSFET
相關代理商/技術(shù)參數(shù)
參數(shù)描述
STD20NE03LT4 制造商:STMicroelectronics 功能描述:
STD20NE06 功能描述:MOSFET RO 511-STD20NF06 511BCY79IX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD20NE06T4 功能描述:MOSFET N-CH 60V 20A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD20NF06 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 60V 24A DPAK
STD20NF06L 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 60V 24A TO252