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參數(shù)資料
| 型號： | STD1NB80-1 |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel 800V-16Ω-1A- IPAK PowerMESH MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道800V的-16Ω- 1A型，像是iPak PowerMESH MOSFET的（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 55K |
| 代理商： | STD1NB80-1 |
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STD1NB80-1
5/5
相關PDF資料 |
PDF描述 |
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| STD1NC40-1 | N - CHANNEL 400V- 8ohm - 1A - IPAK PowerMESH II MOSFET |
| STD1NC60 | N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMesh⑩II MOSFET |
| STD1NC70Z | N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| STD1NC70Z-1 | Brilliance Bundled Coaxial Cable, Banana Peel; Coaxial RG/U Type:59; Impedance:75ohm; Conductor Size AWG:20; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes |
| STP2NC70Z | N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STD1NB80-1 | 制造商:STMicroelectronics 功能描述:MOSFET N I-PAK |
| STD1NB80T4 | 功能描述:MOSFET N-Ch 800 Volt 1.0 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD1NC40-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 400V- 8ohm - 1A - IPAK PowerMESH II MOSFET |
| STD1NC60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMesh⑩II MOSFET |
| STD1NC60T4 | 制造商:STMicroelectronics 功能描述: |
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