參數(shù)資料
型號(hào)： STD1NB60
廠商： 意法半導(dǎo)體
英文描述： N - CHANNEL 600V - 7.4ohm - 1A - IPAK/DPAK PowerMESH MOSFET
中文描述： ? - 600V的通道- 7.4ohm - 1A條-像是iPak / MOSFET的DPAK封裝PowerMESH
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 66K
代理商： STD1NB60
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
2.78
100
1.5
275
o
C/W
oC/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
1
A
E
AS
150
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
I
D
= 250
μ
A V
GS
= 0
600
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating T
c
= 125
o
C
1
10
μ
A
μ
A
nA
I
GSS
V
GS
=
±
30 V
±
100
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
On State Drain Current
V
DS
= V
GS
I
D
= 250
μ
A
3
4
5
V
R
DS(on)
V
GS
= 10V I
D
=0.6 A
7.4
8.5
I
D(on)
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
1
A
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 1 A
0.97
S
C
iss
C
oss
C
rss
V
DS
= 25 V f = 1 MHz V
GS
= 0
180
32
3.5
pF
pF
pF
STD1NB60
2/6
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STD1NB60-1 功能描述:MOSFET N-CH 600V 1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD1NB60T4 功能描述:MOSFET N-CH 600V 1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD1NB80 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 800V - 16ohm - 1A - DPAK/IPAK PowerMESH MOSFET
STD1NB80- 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 800V - 16ohm - 1A - IPAK PowerMESH MOSFET
STD1NB80-1 制造商:STMicroelectronics 功能描述:MOSFET N I-PAK
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