- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381109 > STD1NA60 (意法半導(dǎo)體) N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | STD1NA60 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| 中文描述： | ? -通道增強(qiáng)型功率MOS器件 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 171K |
| 代理商： | STD1NA60 |
STD1NA60
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 7.2
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
APPLICATION ORIENTED
CHARACTERIZATION
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
I
HIGH SPEED SWITCHING
I
UNINTERRUPTIBLE POWER SUPPLY (UPS)
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
INDUSTRIAL ACTUATORS
I
DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
I
PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 8
I
D
STD1NA60
600 V
1.6 A
November 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
600
V
V
DGR
600
±
30
1.6
V
V
GS
V
I
D
A
I
D
1
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
6.4
A
40
W
Derating Factor
0.32
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
150
1
3
2
IPAK
TO-251
(Suffix ”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD1NB50-1 | TRANSISTOR MOSFET D-PAK |
| STD1NK80Z | N-CHANNEL 800V - 13 ヘ - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH⑩ MOSFET |
| STD1NK80Z-1 | N-CHANNEL 800V - 13 ヘ - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH⑩ MOSFET |
| STN1NK80Z | N-CHANNEL 800V - 13 ヘ - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH⑩ MOSFET |
| STD20N06 | N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD1NA60-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1.6A I(D) | TO-251 |
| STD1NA60T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1.6A I(D) | TO-252AA |
| STD1NB50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 500V - 7.5ohm - 1.4A IPAK PowerMESH MOSFET |
| STD1NB50-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:TRANSISTOR MOSFET D-PAK |
| STD1NB60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 600V - 7.4ohm - 1A - IPAK/DPAK PowerMESH MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。