- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382556 > STD1LNK60Z-1 (意法半導(dǎo)體) N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | STD1LNK60Z-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET |
| 中文描述： | N溝道600V的13歐姆0.8A TO-92/IPAK/SOT-223齊納MOSFET的保護(hù)SuperMESH |
| 文件頁(yè)數(shù)： | 2/14頁(yè) |
| 文件大?。?/td> | 657K |
| 代理商： | STD1LNK60Z-1 |
第1頁(yè)當(dāng)前第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
2/14
Table 3: Absolute Maximum ratings
Symbol
( ) Pulse width limited by safe operating area
(1) I
SD
≤
0.3A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
Table 4: Thermal Data
(#) When mounted on 1 inch2 Fr-4 board, 2 Oz Cu
Table 5: Avalanche Characteristics
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Table 6: Gate-Source Zener Diode
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
TO-92
Unit
IPAK
SOT-223
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
0.8
0.3
0.3
A
0.5
0.189
0.189
A
Drain Current (pulsed)
3.2
1.2
1.2
A
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
25
3
3.3
W
0.24
0.025
0.026
W/°C
V
ESD(G-S)
dv/dt (1)
T
j
T
stg
800
V
4.5
V/ns
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
IPAK
5
100
--
275
TO-92
--
120
40
260
SOT-223
--
37.87(#)
--
260
Rthj-case
Rthj-amb
Rthj-lead
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
°C/W
°C/W
°C/W
°C
Maximum Lead Temperature For Soldering Purpose
Parameter
Max Value
0.8
Unit
A
60
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STN1NK60Z | N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET |
| STQ1NK60ZR | N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET |
| STQ1NK60ZR-AP | N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET |
| STD1NB50 | N-Channel 500V-7.5Ω-1.4A- IPAK PowerMESHTM MOSFET(N溝道MOSFET) |
| STD1NB60 | N - CHANNEL 600V - 7.4ohm - 1A - IPAK/DPAK PowerMESH MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD1LNK60Z-1_06 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET |
| STD1NA60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STD1NA60-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1.6A I(D) | TO-251 |
| STD1NA60T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1.6A I(D) | TO-252AA |
| STD1NB50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 500V - 7.5ohm - 1.4A IPAK PowerMESH MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。