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參數(shù)資料
| 型號(hào)： | STD17N06T4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 17A I(D) | TO-252 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 17A條（?。﹟至252 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 180K |
| 代理商： | STD17N06T4 |
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
2.73
100
1.5
275
o
C/W
o
C/W
o
C/W
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 25 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
δ
< 1%)
17
A
E
AS
60
mJ
E
AR
15
mJ
I
AR
12
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
μ
A
for
STD17N05
for
STD17N06
V
GS
= 0
50
60
V
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
V
GS
=
±
20 V
T
c
= 125
o
C
1
10
μ
A
μ
A
nA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
ON (
)
Symbol
Parameter
Test Conditions
I
D
= 250
μ
A
I
D
= 8.5 A
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
2
2.9
4
V
R
DS(on)
Static Drain-source On
Resistance
On State Drain Current
V
GS
= 10 V
0.06
0.085
I
D(on)
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
17
A
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 8.5 A
5
8
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
600
250
80
800
350
120
pF
pF
pF
STD17N05/STD17N06
2/10
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