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參數(shù)資料
| 型號(hào)： | STD17N05L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
| 中文描述： | ? -通道增強(qiáng)型低閾值功率MOS器件 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大小： | 172K |
| 代理商： | STD17N05L |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING RESISTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 30 V
R
GS
= 50
(see test circuit, figure 3)
V
DD
= 40 V
R
GS
= 50
(see test circuit, figure 5)
V
DD
= 40 V
I
D
= 8.5 A
V
GS
= 5 V
60
350
90
500
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 17 A
V
GS
= 5 V
130
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 17 A
V
GS
= 5 V
18
6
9
26
nC
nC
nC
SWITCHING INDUCTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 40 V
R
GS
= 50
(see test circuit, figure 5)
I
D
= 17 A
V
GS
= 5 V
70
100
180
100
150
260
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
17
68
A
A
V
SD
(
)
t
rr
I
SD
= 17 A
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
o
C
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 17 A
V
DD
= 30 V
(see test circuit, figure 5)
65
0.13
4
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5%
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STD17N05L/STD17N06L
3/10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD17N06L | N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
| STD17N06 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STD17N05-1 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 17A I(D) | TO-251 |
| STD17N05L-1 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 17A I(D) | TO-251AA |
| STD17N05LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 17A I(D) | TO-252AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD17N05L-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 17A I(D) | TO-251AA |
| STD17N05LT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 17A I(D) | TO-252AA |
| STD17N05T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 17A I(D) | TO-252 |
| STD17N06 | 功能描述:MOSFET REORD 511-STD16NE06 TO-251 N-CH 60V 17A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD17N06-1 | 功能描述:MOSFET DISC BY STM 4/01 TO-251 N-CH 60V 17A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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